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Fast Recovery Epitaxial Diode (FRED)
DSEI 12
IFAVM = 14 A VRRM = 600 V trr = 35 ns
VRSM V 640
VRRM V 600
Type
A
C
TO-220 AC
C A
DSEI 12-06A A = Anode, C = Cathode
C
Symbol IFRMS IFAVM yyx IFRM IFSM
Test Conditions TVJ = TVJM TC = 100C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 25 14 150 100 110 85 95 50 50 36 37 -40...+150 150 -40...+150 A A A A A A A A2s A2s A2s A2s C C C W Nm g
Features
q
q q q q
TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
q q
International standard package JEDEC TO-220 AC Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0
TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Md Weight TC = 25C Mounting torque
Applications
q
q q q
62 0.4...0.6 2
q
q q
Symbol
Test Conditions
Characteristic Values typ. max. 50 25 3 1.5 1.7 1.12 23.2 2 0.5 60 mA mA mA V V V mW K/W K/W K/W ns A
q
Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders
IR
TVJ = 25C TVJ = 25C TVJ = 125C IF = 16 A;
VR = VRRM VR = 0.8 * VRRM VR = 0.8 * VRRM TVJ = 150C TVJ = 25C
Advantages
q q
VF VT0 rT RthJC RthCK RthJA trr IRM
q q q
For power-loss calculations only TVJ = TVJM
High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling
IF = 1 A; -di/dt = 50 A/ms; VR = 30 V; TVJ = 25C VR = 350 V; IF = 12 A; -diF/dt = 100 A/ms L 0.05 mH; TVJ = 100C
35 4
50 4.4
(c) 2000 IXYS All rights reserved
1-2
033
x IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions
DSEI 12, 600 V
Fig. 1 Forward current versus voltage drop.
Fig. 2 Recovery charge versus -diF/dt.
Fig. 3 Peak reverse current versus -diF/dt.
Fig. 4 Dynamic parameters versus junction temperature.
Fig. 5 Recovery time versus -diF/dt.
Fig. 6 Peak forward voltage versus diF/dt.
Dim. A B C D E F G H J K L M N Q Millimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 2.54 1.15 0.64 4.83 3.56 0.38 2.04 0.64 6.85 3.42 1.77 6.35 0.89 5.33 4.82 0.56 2.49 1.39 Min. Inches Max.
Dimensions
0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 0.230 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055
Fig. 7 Transient thermal impedance junction to case.
(c) 2000 IXYS All rights reserved
2-2

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